2SA1169 transistor equivalent, power transistor.
*Designed for power amplifier and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER.
*Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min)
*High Power Dissipation
*Complement to Type 2SC2773
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for power a.
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